The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 08, 2022
Applicant:
Asm Ip Holding, B.v., Almere, NL;
Inventors:
Charles Dezelah, Helsinki, FI;
Timothee Blanquart, Oud-Heverlee, BE;
Assignee:
ASM IP Holding, B.V., Almer, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02205 (2013.01); C23C 16/342 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01L 21/02175 (2013.01); H01L 21/0228 (2013.01);
Abstract
A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.