The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Aug. 25, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Sungha Choi, Suwon-si, KR;

Hongsuk Kim, Yongin-si, KR;

Kihun Kim, Yongin-si, KR;

Sangheon Yong, Yongin-si, KR;

Juhyuk Park, Hwaseong-si, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); C23C 16/045 (2013.01); C23C 16/345 (2013.01); C23C 16/56 (2013.01); H01J 37/32357 (2013.01); H01J 37/3244 (2013.01);
Abstract

A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the substrate through a gas supply unit on the substrate support unit, and generating a direct plasma in a reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, wherein a plurality of sub-steps are performed during the supplying of the oligomeric silicon precursor and the nitrogen-containing gas and the generating a direct plasma, and different plasma duty ratios are applied during the plurality of sub-steps.


Find Patent Forward Citations

Loading…