The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Dec. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Zuoguang Liu, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Arthur Gasasira, Halfmoon, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); H10B 63/80 (2023.02); H10N 70/023 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/8413 (2023.02);
Abstract

A phase change memory element including at least one phase change material layer, and a heater conductor, wherein at least a portion of the heater conductor is circumferentially surrounded by the at least one phase change material layer. The phase change memory element is symmetrical. The phase change memory element can include a top electrode circumferentially surrounding and connected to the at least one phase change material layer, and a bottom electrode in contact with the heater conductor. The phase change memory element can include at least one resistive liner in contact with the at least one phase change material layer.


Find Patent Forward Citations

Quick Actions:

Cheng, Kangguo. (2026). Self-aligned, symmetric phase change memory element (U.S. Patent No. 12550629). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550629

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