The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Apr. 21, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yi-Cheng Chu, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Kai-Wen Cheng, Taichung, TW;
Han-Ting Tsai, Hsinchu, TW;
Jung-Tsan Tsai, New Taipei, TW;
Pao-Yi Tai, Miaoli County, TW;
Chien-Hua Huang, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Some embodiments relate to a memory device. The memory device includes a substrate comprising an inter-metal dielectric layer having a metal line, a dielectric layer over the substrate, a bottom electrode via through the dielectric layer and in contact with the metal line, a bottom electrode over the bottom electrode via, a magnetic tunneling junction (MTJ) element over the bottom electrode, and a top electrode over the MTJ element. A center portion of the bottom electrode directly above the bottom electrode via is thicker than an edge portion of the bottom electrode.