The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jun. 21, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Chia-Chan Chen, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 39/806 (2025.01); H10F 39/024 (2025.01); H10F 77/413 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01);
Abstract
A photo-sensing device includes a semiconductor substrate, a photosensitive device, a dielectric layer and a light pipe. The photosensitive device is in the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The light pipe is over the photosensitive device and embedded in the dielectric layer. The light pipe includes a curved and convex light-incident surface.