Semiconductor structure and method for fabricating same

Abstract

Embodiments provide a semiconductor structure and a fabricating method. The method includes: providing a substrate including a first type region and a second type region; a first insulation layer and a first initial gate structure being provided on the substrate of the first type region, and a second insulation layer and a second initial gate structure being provided on the substrate of the second type region; and simultaneously etching the first initial gate structure and the second initial gate structure multiple times to form a first gate structure and a second gate structure, an orthographic projection of a bottom of the first gate structure on the substrate being positioned in an orthographic projection of a top of the first gate structure on the substrate, where after a first etching process, a top surface of the first insulation layer positioned in the first type region is not exposed to outside.