The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 13, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Juntao Li, Cohoes, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Dureseti Chidambarrao, Weston, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 23/48 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H01L 23/481 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/013 (2025.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 84/83 (2025.01);
Abstract

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a trench isolation between a first source/drain region of a first transistor and a second source/drain region of a second transistor, wherein the trench isolation includes an upper portion and a lower portion; the lower portion has a first lower sidewall and a second lower sidewall that intersects with the first lower sidewall to form a pointy bottom of the trench isolation; a first lower conformal liner at the first lower sidewall and a second lower conformal liner at the second lower sidewall; and the first and second lower conformal liners pinch off at the pointy bottom. A method of forming the same is also provided.


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