The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Jun. 24, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Anupam Dutta, Krishnapur, IN;
Partha S. Gupta, Dhakuria, IN;
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10B 99/00 (2023.01); H10D 62/80 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/711 (2025.01); H10B 99/22 (2023.02); H10D 62/80 (2025.01); H10D 86/201 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to memory devices and methods of manufacture. The structure includes: a gate structure having a gate dielectric material and a gate body; a body region under the gate dielectric material; a first doped region laterally adjacent to a first side of the body region; a second doped region laterally adjacent to the first doped region; and a shallow trench isolation structure laterally adjacent to a second side of the body region.