The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Sep. 20, 2022
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Tomoyuki Obata, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 62/127 (2025.01); H10D 64/513 (2025.01); H10D 64/519 (2025.01);
Abstract

Provided is a semiconductor device including: an active portion provided thereon; a plurality of trench portions each including a gate conductive portion and arranged in a array direction while extending in a extending direction in the active portion, a conductive portion shape ratio of a trench length to a width of the gate conductive portion array direction being 1,000 or more; a first control pad protruding toward an inner side of the semiconductor substrate from a first outer peripheral side of the semiconductor substrate in a top view; and a first well region provided below the first control pad and to cover the first control pad in the top view, in which a shortest distance between the first well region and a trench center position as a center of a length of the plurality of trench portions in the extending direction in the top view is 1,000 μm or more.


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