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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12550337 B1

PDFFull Text
Date of Patent:
Feb. 10, 2026

Filed:

Feb. 25, 2022

Metal halide resistive memory device and method for forming the same

Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Chia-Shuo Li, Miaoli County, TW;

Yu-Tien Wu, Taipei, TW;

Bo-You Chen, Tainan, TW;

I-Chih Ni, New Taipei, TW;

Chih-I Wu, Taipei, TW;

Assignees:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

NATIONAL TAIWAN UNIVERSITY, Taipei, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Ratisha Mehta

Assistant Examiner:

Brad A Knudson

Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H10N 70/021 (2023.02); H10N 70/023 (2023.02); H10N 70/066 (2023.02); H10N 70/245 (2023.02); H10N 70/841 (2023.02); H10N 70/8416 (2023.02); H10N 70/881 (2023.02);
Abstract

A method includes forming a transistor over a substrate; and forming a resistive element over the transistor, in which forming the resistive element includes forming a bottom electrode electrically connected to a source/drain region of the transistor; forming a resistive switching layer over the bottom electrode, in which the resistive switching layer is made of metal halide; and forming a top electrode over the resistive switching layer.

Find Patent Forward Citations

Li, Chia-Shuo. (2026). Metal halide resistive memory device and method for forming the same (U.S. Patent No. 12550337). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550337

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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