The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jan. 09, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Jiefang Deng, Hefei, CN;

Wei Chang, Hefei, CN;

Huihui Li, Hefei, CN;

Xiaoguang Wang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/20 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/20 (2023.02); H10N 50/80 (2023.02);
Abstract

The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals, where the active region includes a source, a drain, and a channel region; a word line, where the word line is connected to the channel region and extends along a first direction; a bit line, where the bit line is connected to the drain or the source and extends along a second direction, the first direction being different from the second direction; and a magnetic memory cell, connected to the source or the drain.


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