The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2026
Filed:
Aug. 11, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kuen-Yi Chen, Hsinchu, TW;
Yu-Sheng Chen, Taoyuan, TW;
Yi Ching Ong, Hsinchu, TW;
Kuo-Ching Huang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01); H10B 53/10 (2023.01); H10B 53/20 (2023.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 53/10 (2023.02); H10B 53/20 (2023.02); H10B 61/22 (2023.02);
Abstract
Provided are ferroelectric tunnel junction (FTJ) structures, memory devices, and methods for fabricating such structures and devices. An FTJ structure includes a first electrode, a ferroelectric material layer, and a catalytic metal layer in contact with the ferroelectric material layer.