The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Apr. 06, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yun-Feng Kao, New Taipei, TW;

Wei Lee, Hsinchu, TW;

Jyun-Yan Kuo, Hsinchu, TW;

Katherine H. Chiang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 7/06 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 7/062 (2013.01); G11C 11/1673 (2013.01); H10B 12/09 (2023.02); H10B 12/315 (2023.02);
Abstract

A semiconductor device includes: an array of memory cells located over a substrate, wherein each of the memory cells includes a respective instance of an access transistor and a respective instance of a memory structure configured to store a data bit and electrically connected to a source structure of the respective instance of the access transistor; and a memory monitor device including an additional instance of the access transistor, an additional instance of the memory structure that is electrically connected to a source structure of the additional instance of the access transistor, and at least one monitor transistor having a respective monitor gate electrode that is electrically connected to the source structure of the additional instance of the access transistor.


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