The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Sep. 08, 2022
Applicant:

Honor Device Co., Ltd., Shenzhen, CN;

Inventors:

Ziqi Zhang, Shenzhen, CN;

Ni Sun, Shenzhen, CN;

Song Huang, Shenzhen, CN;

Assignee:

Honor Device Co., Ltd., Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/06 (2006.01); H02J 7/00 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); H02J 7/007182 (2020.01); H03K 2017/0806 (2013.01); H03K 2217/0036 (2013.01);
Abstract

A switch circuit and an electronic device are provided. The switch circuit includes an external node, an internal node, an enhancement-mode gallium-nitride high-electron-mobility transistor, and a driver module. The enhancement-mode gallium-nitride high-electron-mobility transistor includes a first gate electrode, a first electrode, and a second electrode. The driver module includes a control terminal. The first gate electrode is coupled to the control terminal, the first electrode is coupled to the external node, and the internal node is coupled to the second electrode. The external node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor. When the enhancement-mode gallium-nitride high-electron-mobility transistor is turned on, the charging voltage is transmitted to the internal node. Alternatively, the internal node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor.


Find Patent Forward Citations

Zhang, Ziqi. (2026). Switch circuit and electronic device (U.S. Patent No. 12549170). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12549170

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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