The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Apr. 10, 2024
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhipeng Dong, Wuhan, CN;

Xufeng Zhou, Wuhan, CN;

Jianjie Li, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/102 (2013.01); G11C 16/3404 (2013.01);
Abstract

A memory device includes: a memory array; the memory array includes memory cells and word lines coupled to the memory cells; and a peripheral circuit coupled to the memory array and configured to: perform a first read operation, wherein the first read operation includes: applying a first read voltage to a first word line of the word lines that belongs to the first type; and applying a first pass voltage to word lines except the first word line; perform a second read operation, wherein the second read operation includes: applying a second read voltage to a second word line of the word lines that belongs to the second type; applying a second pass voltage to word lines which are adjacent to the second word line; and applying the first pass voltage to word lines except both of the second word line and the word lines adjacent to the second word line.


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