The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Jul. 31, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Abhijith Prakash, Milpitas, CA (US);

Xiang Yang, Santa Clara, CA (US);

Wei Cao, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01);
Abstract

The memory device includes sensing circuitry that senses data in the memory cells of a selected word line. If the memory device is in the first operating mode, the sensing circuitry senses the selected word line with a first sensing process that includes applying a first voltage to a source side of at least one NAND string and ramping at least one voltage applied to the memory block to a target voltage over a first duration. If the memory device is in the second operating mode, the sensing circuitry senses the selected word line with a second sensing process that includes applying a second voltage to the source side of at least one NAND string and ramping the at least one voltage applied to the memory block to the target voltage over a second duration that is greater than or equal to the first duration.


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