The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Mar. 08, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ramkumar Jayaraman, Bangalore, IN;

Krishnaprasad H, Bangalore, IN;

Robert A. Branch, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0631 (2013.01); G06F 3/0604 (2013.01); G06F 3/0673 (2013.01);
Abstract

Methods and apparatus for mapping memory allocation to DRAM dies of a stacked memory modules are described herein. Memory address ranges in a module employing 3DS (three dimensional stacked) DRAMs (Dynamic Random Access Memories) comprising stacked DRAM dies are mapped to DRAM dies in the module based on a layer of the DRAM dies, where dies in different layers have different thermal dissipation characteristic. Chunks of the memory address range are allocated to software entities such as virtual machines (VMs) and/or applications based on a memory access rate of the VMs/applications and the thermal dissipation characteristics of the DRAM die layers, wherein VMs/applications with higher memory access rate are allocated memory on DRAM dies with higher thermal dissipation. In one aspect, memory ranks are associated with respective die layers. In response to detection of change in access rates, memory may be migrated between ranks. Interleaving at multiple levels is also supported.


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