The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jul. 28, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungwoo Park, Suwon-si, KR;

Yongjae Kim, Suwon-si, KR;

Heonwoo Kim, Suwon-si, KR;

Seung-Kwan Ryu, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 23/49816 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 25/0657 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/1703 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/37001 (2013.01);
Abstract

The present disclosure provides semiconductor packages and methods of fabricating the same. In some embodiments, a semiconductor package includes a substrate including first and second regions, a first pad on the first region, a second pad on the second region, a first dielectric layer on the first region and including a first opening exposing the first pad, a second dielectric layer on the second region and including a second opening exposing the second pad, a first bump structure on the first pad and in the first opening, and a second bump structure on the second pad and in the second opening. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. A distance between the substrate and an uppermost end of the first bump structure is longer than a distance between the substrate and an uppermost end of the second bump structure.


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Park, Sungwoo. (2026). Semiconductor package and method of fabricating the same (U.S. Patent No. 12543605). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543605

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