The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Jul. 07, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Junli Wang, Slingerlands, NY (US);

Albert M. Chu, Nashua, NH (US);

Albert M. Young, Fishkill, NY (US);

Chen Zhang, Guilderland, NY (US);

Su Chen Fan, Cohoes, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/48 (2006.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5286 (2013.01); H01L 23/481 (2013.01); H10D 30/6757 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device including a first source/drain region (S/D) located on a frontside of a substrate, wherein the first source/drain region has a first width, a second S/D region located on the frontside of the substrate, wherein the second source/drain region is located above the first source drain region, wherein the second source/drain region has second width, wherein the first width is larger than the second width, a first power rail located on a backside of the substrate, a second power rail located on the backside of the substrate, a first connector in contact with the first source/drain region, wherein the first connector is only in contact with a sidewall of the first source/drain region, and a second connector in contact with the second source/drain region, wherein the second connector is in contact with a top surface and a side surface of the second source/drain region.


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