The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jun. 06, 2023
United Microelectronics Corp., Hsinchu, TW;
Jia-Rong Wu, Kaohsiung, TW;
Yi-An Shih, Changhua County, TW;
Hsiu-Hao Hu, Keelung, TW;
I-Fan Chang, Tainan, TW;
Rai-Min Huang, Taipei, TW;
PO Kai Hsu, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided is a semiconductor device including a substrate, a first interconnection structure, and an MTJ device. The first interconnection structure is disposed on the substrate. The MTJ device is reversely bonded to the first interconnection structure. The MTJ device includes a first electrode layer, a second electrode layer and an MTJ stack structure. The first electrode layer is bonded to the first interconnect structure. The second electrode layer is located above the first electrode layer. The MTJ stack structure is located between the first and second electrode layers. The MTJ stack structure includes a first barrier layer, a free layer and a reference layer. The first barrier layer is located between the first and second electrode layers. The free layer is located between the first barrier layer and the first electrode layer. The reference layer is located between the first barrier layer and the second electrode layer.