The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Dec. 25, 2019
Zhuzhou Crrc Times Semiconductor Co., Ltd., Hunan, CN;
ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD., Zhuzhou, CN;
Abstract
Disclosed is a cellular structure of a silicon carbide MOSFET device, and a silicon carbide MOSFET device. The cellular structure comprises: second conductive well regions located on two sides of the cellular structure and arranged within the surface of a drift layer, first conductive source regions located within the surfaces of the well regions, and a gate structure located at the center of the cellular structure and in contact with the source regions, the well regions, and the drift layer. The cellular structure further comprises a source metal layer located above the source regions and forming ohmic contact with the source regions; on two sides of the cellular structure, side trenches are formed downwardly on regions of the drift layer that are not covered by the well regions; Schottky metal layers forming Schottky contact with the drift layer below the side trenches are arranged in the side trenches.