The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Oct. 20, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Misaki Uchida, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Shuntaro Yaguchi, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device including: a buffer region having a doping concentration higher than a bulk donor concentration; a first low-concentration hydrogen peak in the buffer region; a second low-concentration hydrogen peak in the buffer region closer to a lower surface than the first low-concentration hydrogen peak; a high-concentration hydrogen peak in the buffer region closer to the lower surface than the second low-concentration hydrogen peak, the high-concentration hydrogen peak having a hydrogen chemical concentration higher than that of the second low-concentration hydrogen peak; and a flat region including a region between the two low-concentration hydrogen peaks and a region including the second low-concentration hydrogen peak, and having a doping concentration higher than a bulk donor concentration, an average value of the doping concentration being equal to or smaller than a local minimum value of a doping concentration between the second low-concentration hydrogen peak and the high-concentration hydrogen peak.