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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12543332 B1

PDFFull Text
Date of Patent:
Feb. 03, 2026

Filed:

Aug. 03, 2023

Semiconductor device

Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Kazushi Maeda, Tatsuno Hyogo, JP;

Ryohei Gejo, Kawasaki Kanagawa, JP;

Shigeaki Hayase, Himeji Hyogo, JP;

Assignees:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 12/421 (2025.01); H10D 12/441 (2025.01); H10D 62/104 (2025.01); H10D 62/106 (2025.01); H10D 62/393 (2025.01); H10D 62/8503 (2025.01);
Abstract

A semiconductor device includes a semiconductor layer including an element region, and a termination region; a first electrode; a second electrode; a semi-insulating film located on the termination region; an insulating film located between the semiconductor layer and the semi-insulating film; and a protective film located on the semi-insulating film. The insulating film includes an inner perimeter portion, the inner perimeter portion being located between an end portion of the first electrode positioned at the termination region side and an end portion of the second semiconductor part positioned at the termination region side, an outer perimeter portion located between the second electrode and the semiconductor layer, and an intermediate portion located between the inner perimeter portion and the outer perimeter portion. A thickness of the intermediate portion is less than a thickness of the inner perimeter portion and a thickness of the outer perimeter portion.

Find Patent Forward Citations

Maeda, Kazushi. (2026). Semiconductor device (U.S. Patent No. 12543332). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12543332

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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