The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Apr. 29, 2020
Micron Technology, Inc., Boise, ID (US);
Shyam Surthi, Boise, ID (US);
Chris M. Carlson, Nampa, ID (US);
Richard J. Hill, Boise, ID (US);
Davide Resnati, Cinsello Balsamo, IT;
Micron Technology, Inc., Boise, ID (US);
Abstract
An electronic structure comprising stacks comprising alternating dielectric materials and conductive materials in a cell region of the electronic structure. A pillar high-k dielectric material is adjacent to the stacks and in a pillar region of the electronic structure. A charge blocking material, a nitride material, a tunnel dielectric material, and a channel material are adjacent to the pillar high-k dielectric material in the pillar region of the electronic structure. A cell high-k dielectric material surrounds the conductive materials in the cell region of the electronic structure. The cell high-k dielectric material adjoins a portion of the pillar high-k dielectric material. Additional electronic structures are disclosed, as are related electronic devices, systems, and methods of forming an electronic device.