Semiconductor structure, method for forming same and layout structure

Abstract

A method for forming a semiconductor structure comprises: providing a substrate, which includes a first area and a second area arranged in sequence in a second direction, the first area including active layers arranged at intervals in a third direction; forming an initial gate structure located on a surface of each active layer in the first area; etching the initial gate structures to form comb-shaped gate structures stacked in a third direction, each comb-shaped gate structure including first gate structures arranged at intervals in the first direction; and forming bit line structures extending in the third direction and capacitor structures extending in the second direction in the second area, the bit line structures and the capacitor structures are connecting to the first gate structures.