The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2026
Filed:
Jan. 03, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jaeil Kim, Suwanee, GA (US);
Simon J. Lovett, Nampa, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 11/16 (2006.01); G06F 3/06 (2006.01); G11C 29/00 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1612 (2013.01); G06F 3/0619 (2013.01); G06F 3/0658 (2013.01); G06F 3/0673 (2013.01); G11C 29/4401 (2013.01); G11C 29/76 (2013.01); G06F 2201/805 (2013.01);
Abstract
A memory device can include a bank of memory cells. The bank of memory cells can include multiple groups of columns of memory cells. The memory device can include controller circuitry to provide information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups at row address strobe (RAS) time. Upon detection of an error condition in at least one group of columns of memory cells, the controller circuitry can implement the column repair redundancy swap on the corresponding group.