The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Sep. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd, Hsinchu, TW;

Inventor:

Shih-Yu Liao, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); G02B 6/136 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01);
Abstract

A photonic device structure and method of fabricating the same. The structure includes a substrate that has a topside oxide layer and a silicon layer that is formed on the topside oxide layer. The structure further includes a rib waveguide component formed in the silicon layer and that includes contact holes. The contact holes include a contact hole depth, and a contact hole trench that is formed in the silicon layer and which has a first sidewall, a second sidewall, and a bottom surface. The contact hole further includes a contact etch stop layer formed in the contact hole trench.


Find Patent Forward Citations

Liao, Shih-Yu. (2026). Photonic device and method of fabricating same (U.S. Patent No. 12541054). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12541054

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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