The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 2026

Filed:

Apr. 21, 2023
Applicant:

National Taiwan University of Science and Technology, Taipei, TW;

Inventors:

Bing-Joe Hwang, Taipei, TW;

Sheng-Chiang Yang, Taipei, TW;

Chun-Huang Xu, Taipei, TW;

Wei-Nien Su, Taipei, TW;

Ping-Chun Tsai, Taipei, TW;

Kuan-Lin Chu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/56 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01M 4/04 (2006.01); H01M 4/1391 (2010.01);
U.S. Cl.
CPC ...
C23C 16/45527 (2013.01); C23C 16/403 (2013.01); C23C 16/409 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); H01M 4/0428 (2013.01); H01M 4/1391 (2013.01);
Abstract

A deposition method, comprising the steps of exposing a carrier to moisture, so that a hydroxy group can be distributed on the surface of the carrier, and adding a liquid precursor to the hydroxy group to perform an alcohol condensation reaction to form a target atom layer or a target atom compound layer of the deposition carrier; the process provided by the present invention allows one or more liquid precursors to be freely selected for uniform deposition on the carrier. Compared to the current low-yield dry atomic deposition technology, it has no limitation on the volume of the reaction chamber, no complicated and diverse process, and can be designed as a continuous process to achieve wider industrial availability.


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