The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Nov. 01, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hayato Iga, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/00 (2014.01); B23K 26/067 (2006.01); B23K 26/08 (2014.01); B23K 26/53 (2014.01); H01L 21/18 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02021 (2013.01); B23K 26/0006 (2013.01); B23K 26/0676 (2013.01); B23K 26/0823 (2013.01); B23K 26/53 (2015.10); H01L 21/02008 (2013.01); H01L 21/02013 (2013.01); H01L 21/02016 (2013.01); H01L 21/185 (2013.01); H01L 21/187 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); B23K 2103/56 (2018.08);
Abstract

A method of processing a bonded wafer formed by bonding a first wafer and a second wafer to each other via a bonding layer includes a coordinate generating step of generating coordinates of an undersurface position of the first wafer, the undersurface position being to be irradiated with laser beams, such that an end position of a crack extending from modified layers formed within the first wafer is located at an outer circumference of the bonding layer, and a modified layer forming step of forming a plurality of modified layers in a ring shape by irradiating the coordinates generated in the coordinate generating step with the laser beams of a wavelength transmissible through the first wafer.


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