The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Jan. 21, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Harunaka Yamaguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A buffer layer (), a multiplication layer (), a light-absorbing layer (), a window layer (), and a contact layer () are sequentially stacked on a semiconductor substrate (). The window layer () is doped with an impurity to form a p-type region (). A bandgap of the window layer () is greater than a bandgap of the light-absorbing layer (). The window layer () includes a first window layer (), and a second window layer () formed on the first window layer (). A diffusion rate of the impurity in the second window layer () is higher than a diffusion rate of the impurity in the first window layer (). The first window layer () is a Ru, Rh or Os-doped InP layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile