The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Mar. 24, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsueh-Ju Chen, Taipei, TW;
Yi Hsuan Chen, Hsinchu, TW;
Jyun-Yi Wu, Hsinchu, TW;
Wen-Hung Huang, Hsinchu, TW;
Tsung-Da Lin, Pingtung County, TW;
Jian-Hao Chen, Hsinchu, TW;
Cheng-Lung Hung, Hsinchu, TW;
Kuo-Feng Yu, Zhudong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
In an embodiment, a device includes: an isolation region on a substrate; a first semiconductor fin protruding above the isolation region; a first gate dielectric on a first channel region of the first semiconductor fin, the first gate dielectric including a first interfacial layer and a first high-k dielectric layer; a second semiconductor fin protruding above the isolation region; and a second gate dielectric on a second channel region of the second semiconductor fin, the second gate dielectric including a second interfacial layer and a second high-k dielectric layer, a first portion of the first interfacial layer on the first channel region having a greater thickness than a second portion of the second interfacial layer on the second channel region, the second channel region having a greater height than the first channel region.