The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Dec. 06, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Santosh Sharma, Austin, TX (US);
Michael J. Zierak, Colchester, VT (US);
Steven J. Bentley, Menands, NY (US);
Mark D. Levy, Williston, VT (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/111 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.