The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
May. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Marcus Johannes Henricus Van Dal, Linden, BE;
Gerben Doornbos, Kessel-Lo, BE;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H01L 21/02565 (2013.01); H10D 30/6729 (2025.01); H10D 30/6734 (2025.01); H10D 30/6755 (2025.01); H10D 99/00 (2025.01);
Abstract
A semiconductor device includes an oxide semiconductor stack, a first gate, a first contact structure, and a second contact structure. The oxide semiconductor stack includes an n-type oxide semiconductor layer and a p-type oxide semiconductor layer stacked on each other. The first gate is over the oxide semiconductor stack. The first contact structure and the second contact structure are at opposite sides of the first gate and electrically connected to the oxide semiconductor stack.