The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Sep. 10, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Akiyama, Nirasaki, JP;

Hajime Nakabayashi, Nirasaki, JP;

Akinobu Kakimoto, Nirasaki, JP;

Nobutake Kabuki, Nirasaki, JP;

Yumiko Kawano, Nirasaki, JP;

Sara Otsuki, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H10D 1/692 (2025.01); C23C 16/45529 (2013.01);
Abstract

This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.


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