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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12538482 B1

PDFFull Text
Date of Patent:
Jan. 27, 2026

Filed:

Mar. 17, 2022

Microelectronic devices including stack structures having strengthened intermediate regions of associated insulative structures, and related systems

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nancy M. Lomeli, Boise, ID (US);

Jiewei Chen, Meridian, ID (US);

Naiming Liu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

TraskBritt

Primary Examiner:

Ratisha Mehta

Assistant Examiner:

Mikka undefined Liu

Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); H01L 23/538 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 23/5386 (2013.01); H10B 43/27 (2023.02);
Abstract

A microelectronic device includes a stack structure including insulative structures and conductive structures vertically alternating with the insulative structures. At least one of the insulative structures includes interfacial regions proximate interfaces between the at least one of the insulative structures and two of the conductive structures vertically neighboring the at least one of the insulative structures; and an intermediate region interposed between the interfacial regions. The intermediate region has a different material composition and relatively greater strength than the interfacial regions.

Find Patent Forward Citations

Lomeli, Nancy. (2026). Microelectronic devices including stack structures having strengthened intermediate regions of associated insulative structures, and related systems (U.S. Patent No. 12538482). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12538482

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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