Method of operating a memory controller, memory controller, and memory system

Abstract

The present disclosure provides a method operating a memory controller. In response to a data write instruction, the method may include determining a first memory cell block into which data is to be written, the first memory cell block including a first memory cell page programmed and a second memory cell page unprogrammed. In response to the first memory cell block meeting the first condition related to a number of reads of the first memory cell page, the method may include determining that a number of first word lines coupled to the first memory cell page is greater than a first threshold. In response to the number of the first word lines not being greater than the first threshold, the method may include writing data into the second memory cell page coupled to a second word line in the first memory cell block.