The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2026

Filed:

Dec. 29, 2021
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Jian Xu, Beijing, CN;

Yayi Wei, Beijing, CN;

Shang Yang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70558 (2013.01); G03F 7/70391 (2013.01); G03F 7/70516 (2013.01);
Abstract

A method and an apparatus for correcting a proximity effect of an electron beam. An initial dose of the electron beam is preset for each exposed square, and proximity effect energy representing an influence of exposing all exposed squares other than a current exposed square on the current exposed is calculated. A corrected dose of the electron beam for the current exposed square is then calculated, and the corrected dose for each exposed square in the electron beam exposure layout matrix is successively calculated. Then, the above calculation iterates for T times to obtain a final corrected dose of the electron beam for each exposed square.


Find Patent Forward Citations

Xu, Jian. (2026). Method and apparatus for correcting proximity effect of electron beam (U.S. Patent No. 12535742). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12535742

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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