The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
Dec. 06, 2022
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Daniel Rhinow, Frankfurt am Main, DE;
Joachim Welte, Darmstadt, DE;
Markus Bauer, Schneckenlohe, DE;
Assignee:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/74 (2012.01); G03F 1/78 (2012.01); G03F 1/86 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/74 (2013.01); G03F 1/78 (2013.01); G03F 1/86 (2013.01); G03F 7/7065 (2013.01);
Abstract
A method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.