The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2026
Filed:
May. 17, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hiroki Yamada, Nirasaki, JP;
Ryota Ifuku, Nirasaki, JP;
Takashi Matsumoto, Nirasaki, JP;
Nobutake Kabuki, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45538 (2013.01); C23C 16/26 (2013.01); C23C 16/45534 (2013.01); C23C 16/45544 (2013.01); C23C 16/511 (2013.01); C23C 16/52 (2013.01); H01J 37/3222 (2013.01); H01J 37/32449 (2013.01); H01J 37/32201 (2013.01); H01J 2237/332 (2013.01);
Abstract
A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.