The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 07, 2023
United Microelectronics Corp., Hsinchu, TW;
Ching-Pin Hsu, Tainan, TW;
Shih Hung Yang, Tainan, TW;
Chu Chun Chang, Kaohsiung, TW;
Kuo-Yuh Yang, Hsinchu County, TW;
Chia-Huei Lin, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device includes a conductive structure, a first dielectric layer, a second dielectric layer and a liner layer. The conductive structure is located on a substrate. The first dielectric layer covers the conductive structure and the substrate. The second dielectric layer is located on the first dielectric layer. An air gap is present in the first dielectric layer and the second dielectric layer, and is located above the conductive structure. The liner layer covers and surrounds a middle portion of the air gap.