The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

May. 25, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Harry-Haklay Chuang, Hsinchu, TW;

Wen-Tuo Huang, Tainan, TW;

Wei-Cheng Wu, Hsinchu County, TW;

Ching I Li, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/564 (2013.01); H01L 24/32 (2013.01); H01L 25/0657 (2013.01); H01L 2224/32145 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A package structure according to the present disclosure includes a bottom substrate, a bottom interconnect structure over the bottom substrate, a top interconnect structure disposed over the bottom interconnect structure and including a metal feature, a top substrate over the top interconnect structure, and a protective film disposed on the top substrate. The protective film includes an interfacial layer on the top substrate, at least one dipole-inducing layer on the interfacial layer, a moisture block layer on the at least one dipole-inducing layer, and a silicon oxide layer over the moisture block layer. The at least one dipole-inducing layer includes aluminum oxide, titanium oxide or zirconium oxide.


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