The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Sep. 25, 2023
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Hayato Iga, Tokyo, JP;

Kazuya Hirata, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B23K 26/00 (2014.01); B23K 26/067 (2006.01); B23K 26/08 (2014.01); B23K 26/53 (2014.01); H01L 21/18 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01); H01L 21/77 (2017.01); H01L 21/78 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02021 (2013.01); B23K 26/0006 (2013.01); B23K 26/0676 (2013.01); B23K 26/0823 (2013.01); B23K 26/53 (2015.10); H01L 21/02016 (2013.01); H01L 21/185 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); H01L 21/68764 (2013.01); H01L 21/77 (2013.01); H01L 21/78 (2013.01); B23K 2103/56 (2018.08);
Abstract

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.


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Iga, Hayato. (2026). Processing method of bonded wafer (U.S. Patent No. 12532715). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12532715

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