Cleaning solution and method of cleaning wafer

Abstract

A cleaning solution includes a solvent having Hansen solubility parameters: 25>δ>13, 25>δ>3, 30>δ>4; an acid having an acid dissociation constant pKa: −11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O) NH, —SOOH, —SOSH, —SOH, —SO—, —CO—, —CN—, —SO—, —CON—, —NH—, —SONH—, and SONH.