The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jan. 18, 2022
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Ryota Hodo, Atsugi, JP;
Shinya Sasagawa, Chigasaki, JP;
Yoshikazu Hiura, Atsugi, JP;
Takahiro Fujie, Isehara, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A high-resolution or high-definition display device is provided. The display device is manufactured by forming a conductive film, a first layer, and a first sacrificial layer; processing the first layer and the first sacrificial layer to expose part of the conductive film; forming a second layer over the first sacrificial layer and the conductive film; forming a second sacrificial layer; processing the second layer and the second sacrificial layer to expose part of the conductive film; processing the conductive film to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer; forming an insulating film covering at least side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer, side and top surfaces of the first sacrificial layer, and side and top surfaces of the second sacrificial layer; processing the insulating film to form a sidewall covering at least the side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer; removing the first sacrificial layer and the second sacrificial layer; and forming a common electrode over the first layer and the second layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile