The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Jan. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
PO-Chun Liu, Hsinchu, TW;
Eugene I-Chun Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates a method of forming an integrated chip structure. The method includes etching a base substrate to form a recess defined by one or more interior surfaces of the base substrate. A doped epitaxial layer is formed along the one or more interior surfaces of the base substrate, and an epitaxial material is formed on horizontally and vertically extending surfaces of the doped epitaxial layer. A first doped photodiode region is formed within the epitaxial material and a second doped photodiode region is formed within the epitaxial material. The first doped photodiode region has a first doping type and the second doped photodiode region has a second doping type.