The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 11, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chun-Wei Liao, Taoyuan, TW;
Hui-Chun Lee, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H10D 89/814 (2025.01); G03F 7/0035 (2013.01); G03F 7/2004 (2013.01); G03F 7/40 (2013.01);
Abstract
The present disclosure in various embodiments provides a hardened resist layer that can reduce resist scum defects in a resist layer. In one embodiment, a lithography method is provided. The method includes forming a resist layer over a substrate, performing an exposure process on the resist layer, performing a developing process on the resist layer to form a patterned resist layer having a plurality resist segments, exposing the patterned resist layer to a vacuum ultraviolet (VUV) radiation, and subjecting the resist pattern to a de-scum process.