The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 11, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Yuan Chen, Hsinchu, TW;
Li-Zhen Yu, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Cheng-Chi Chuang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract
An integrated circuit includes a first nanosheet transistor and a second nanosheet transistor on a substrate. The integrated circuit includes a backside trench through the substrate that removes a lowest semiconductor nanosheet of the first nanosheet transistor while leaving the lowest semiconductor nanosheet of the second nanosheet transistor. The backside trench is filled with a dielectric material.