The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 20, 2026

Filed:

Dec. 12, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Sandeep Puri, Ballston Lake, NY (US);

Venkatesh Periyapatna Gopinath, Fremont, CA (US);

Bipul C. Paul, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10B 63/30 (2023.02); H10N 70/011 (2023.02);
Abstract

A memory cell array structure includes a memory cell including a memory element and a transistor having a source terminal coupled to a second electrode of the memory element, a bit line coupled to a drain terminal of the transistor and including first and second metal lines extending in a first direction, the second metal line coupled to the first metal line and disposed over the first metal line in a third direction, a word line coupled to a gate terminal of the transistor and including a third metal line that extends in a second direction and is disposed over the second metal line in the third direction, and a source line coupled to a first electrode of the memory element. The first to the third directions are perpendicular to each other. The first and the second metal lines together carry a signal through the bit line.


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