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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12532466 B1

PDFFull Text
Date of Patent:
Jan. 20, 2026

Filed:

Dec. 27, 2022

Semiconductor device having source leading-out contacts and source layer, memory device, and memory system

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

He Chen, Wuhan, CN;

Lei Huang, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Ratisha Mehta

Assistant Examiner:

Brad A Knudson

Int. Cl.
CPC ...
H10B 43/10 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/10 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02); H10B 80/00 (2023.02);
Abstract

A semiconductor device, a memory device, and a memory system are provided. The semiconductor device includes an array device and source leading-out contacts. The array device includes channel structures and a source layer connected with the channel structures. The source leading-out contacts are connected with the source layer. The source leading-out contacts and the channel structures are located on two sides of the source layer, respectively. Orthographic projections of the source leading-out contacts on the source layer are in evenly spaced distribution.

Find Patent Forward Citations

Chen, He. (2026). Semiconductor device having source leading-out contacts and source layer, memory device, and memory system (U.S. Patent No. 12532466). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12532466

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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