The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Feb. 03, 2023
Applied Materials, Inc., Santa Clara, CA (US);
Qintao Zhang, Mt Kisco, NY (US);
Sipeng Gu, Clifton Park, NY (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Disclosed are approaches for forming 4Fvertical DRAM devices including buried bitlines. One DRAM device may include a plurality of bitlines between a plurality of vertical structures extending from a substrate, and a bottom source/drain formed in each of the plurality of vertical structures in a saddle area, wherein the saddle area comprises a saddle trench formed through the plurality of vertical structures. The DRAM device may further include a dielectric film formed over the plurality of vertical structures in the saddle area, wherein the dielectric film is present along a portion of the plurality of bitlines and along just a first sidewall the plurality of vertical structures in the saddle area, and a fill material over the plurality of vertical structures of the saddle area, wherein the fill material directly contacts the plurality of bitlines.